PSMN2R2-40PS
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Краткое описание:
40V 100A N-CH Power MOSFET TO-220AB
Дополнительная информация
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 40V and continuous drain current of 100A. Features low drain-source on-resistance of 2.1mΩ at 10V and a maximum gate threshold voltage of 4V. This single-element MOSFET is housed in a TO-220AB through-hole package with 3 pins and a tab, offering a maximum power dissipation of 306W and operating temperature range from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 306000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 130nC |
| Typical Gate Charge @ Vgs | 110@10V|130@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 2.1@10VmOhm |
| Typical Input Capacitance @ Vds | 8423@20VpF |
| Maximum Continuous Drain Current | 100A |
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