PSMN2R6-40YS
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Краткое описание:
N-CH Power MOSFET 40V 100A LFPAK SMT
Дополнительная информация
N-channel enhancement mode Power MOSFET in a 5-pin LFPAK package, designed for surface mounting. Features a maximum drain-source voltage of 40V and a continuous drain current of 100A. Offers a low drain-source on-resistance of 2.8mΩ at 10V and a maximum power dissipation of 131W. Operates across a wide temperature range from -55°C to 175°C.
| PCB | 4 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-235 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 5 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LFPAK |
| AEC Qualified | No |
| Configuration | Single Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.1(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 1.1(Max) |
| Package Length (mm) | 5(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 131000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 63nC |
| Typical Gate Charge @ Vgs | 50@10V|63@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Input Capacitance @ Vds | 3776@12VpF |
| Maximum Continuous Drain Current | 100A |
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