PSMN4R4-80PS,127
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Краткое описание:
80V 100A N-CH Power MOSFET TO-220AB Through Hole
Дополнительная информация
N-channel Power MOSFET, 80V drain-source voltage, 100A continuous drain current. Features low 4.1mΩ drain-source resistance at 10V, 125nC typical gate charge, and 8400pF input capacitance. Housed in a TO-220AB package with through-hole mounting, this single-element TMOS process MOSFET offers a maximum power dissipation of 306W and operates from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290075 |
| Mounting | Through Hole |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.7(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 9.4(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 306000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 125nC |
| Typical Gate Charge @ Vgs | 112@10V|125@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80V |
| Maximum Drain Source Resistance | 4.1@10VmOhm |
| Typical Input Capacitance @ Vds | 8400@40VpF |
| Maximum Continuous Drain Current | 100A |
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