PSMN5R6-100BS,118
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Краткое описание:
N-CH Power MOSFET 100V 100A D2PAK SM
Дополнительная информация
N-channel Power MOSFET, single element, enhancement mode, designed for surface mount applications. Features 100V drain-source voltage, 100A continuous drain current, and low 5.6mOhm drain-source resistance at 10V. Housed in a D2PAK package with 3 pins (2+Tab), offering a maximum power dissipation of 306W. Operates across a wide temperature range from -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 306000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 141|130nC |
| Typical Gate Charge @ Vgs | 141@10V|130@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 5.6@10VmOhm |
| Typical Input Capacitance @ Vds | 8061@50VpF |
| Maximum Continuous Drain Current | 100A |
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