PSMN8R5-60YS
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Краткое описание:
60V 76A N-CH Power MOSFET LFPAK, Single, TMOS
Дополнительная информация
N-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package (MO-235). Features 60V drain-source voltage, 76A continuous drain current, and low 8mΩ drain-source resistance at 10V. Offers typical gate charge of 39nC at 10V and input capacitance of 2370pF at 30V. Maximum power dissipation is 106W, with an operating temperature range of -55°C to 175°C.
| PCB | 4 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-235 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 5 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LFPAK |
| AEC Qualified | No |
| Configuration | Single Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.1(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 1.1(Max) |
| Package Length (mm) | 5(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 106000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 39nC |
| Typical Gate Charge @ Vgs | 39@10V|33@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 8@10VmOhm |
| Typical Input Capacitance @ Vds | 2370@30VpF |
| Maximum Continuous Drain Current | 76A |
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