PSMN9R5-100PS

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PSMN9R5-100PS - Nexperia
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Краткое описание: 100V 89A N-CH Power MOSFET TO-220AB
Производитель Nexperia
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET in a TO-220AB package. Features a maximum drain-source voltage of 100V and a continuous drain current of 89A. Offers a low drain-source on-resistance of 9.6 mOhm at 10V. Designed for through-hole mounting with a single element per chip configuration. Operating temperature range from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code H2HX9
Pin Count 3
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Width (mm) 4.7(Max)
Package Height (mm) 9.4(Max)
Package Length (mm) 10.3(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 211000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 82nC
Typical Gate Charge @ Vgs 63@10V|70.8@10VnC
Maximum Gate Source Voltage 20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 100V
Maximum Drain Source Resistance 9.6@10VmOhm
Typical Input Capacitance @ Vds 4454@50VpF
Maximum Continuous Drain Current 89A

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