PT100MC0MP
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Краткое описание:
900nm Phototransistor, NPN, 35V, 20mA, SMD
Дополнительная информация
General purpose NPN phototransistor for surface mount applications, featuring a 900nm wavelength sensitivity and a clear domed lens. This component offers a collector-emitter breakdown voltage of 35V, a maximum collector current of 20mA, and a power dissipation of 75mW. Operating temperature range spans from -30°C to 85°C, with a fall time of 6µs. Packaged in SMD/SMT, this lead-free and RoHS compliant device is supplied in cut tape.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Fall Time | 6us |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Lens Color | Clear |
| Lens Style | Domed |
| Wavelength | 900nm |
| Package/Case | SMD/SMT |
| Viewing Angle | 15° |
| Output Current | 20mA |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Consumption | 75mW |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -30°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 400mV |
