PT100MF0MP
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Краткое описание:
910nm Phototransistor, 35V, 20mA, SMD, NPN
Дополнительная информация
General purpose phototransistor featuring a 910nm wavelength and NPN polarity. This surface mount device offers a 35V collector-emitter breakdown voltage and a maximum collector current of 20mA. Encased in a domed plastic package suitable for SMD/SMT applications, it operates within a temperature range of -30°C to 85°C and has a power dissipation of 75mW. The component is lead-free, RoHS compliant, and packaged on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.7mm |
| Polarity | NPN |
| Fall Time | 6us |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Style | Domed |
| Wavelength | 910nm |
| Package/Case | SMD/SMT |
| Viewing Angle | 30° |
| Output Current | 20mA |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 75mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -30°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
