PT12-21B/TR8
Производится
Увеличить
Краткое описание:
NPN Phototransistor 940nm 30V 50mA SMD
Дополнительная информация
NPN phototransistor chip for optical sensing applications. Features a 940nm wavelength and a 30V collector-emitter breakdown voltage. This surface mount device offers a 50mA maximum collector current and a 400mV collector-emitter saturation voltage. Encased in a black, domed lens within an SMD/SMT package, it operates from -25°C to 85°C with a 75mW maximum power dissipation. Packaged on tape and reel for efficient assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Fall Time | 15us |
| Packaging | Tape and Reel |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 940nm |
| Orientation | Side View |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
