PT4800E0000F
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Краткое описание:
800nm Phototransistor, 35V, 20mA, Radial, Through Hole
Дополнительная информация
General purpose NPN phototransistor with a 800nm wavelength and 35° viewing angle. Features a radial package with a domed lens style, suitable for through-hole mounting. Offers a maximum collector current of 20mA and a collector-emitter breakdown voltage of 35V. Operates within a temperature range of -25°C to 85°C, with a maximum power dissipation of 75mW and a fall time of 3.5µs. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 1.5mm |
| Height | 3.5mm |
| Length | 3mm |
| Polarity | NPN |
| Fall Time | 3.5us |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lens Style | Domed |
| Wavelength | 800nm |
| Lead Length | 17.5mm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 35° |
| Output Current | 20mA |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Power Consumption | 75mW |
| Number of Channels | 1 |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 20mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Breakdown Voltage | 35V |
