PT480FE0000F
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Краткое описание:
Phototransistor, 860nm, 35V, 20mA, Radial
Дополнительная информация
General purpose NPN phototransistor with 860nm wavelength, housed in a black, domed plastic package with a radial, through-hole mount. Features a 35V collector-emitter breakdown voltage and a maximum collector current of 20mA. Operates within a temperature range of -25°C to 85°C, with a maximum power dissipation of 75mW. This RoHS compliant component has a 70° viewing angle and a fall time of 3500ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.95mm |
| Height | 4mm |
| Length | 3mm |
| Polarity | NPN |
| Fall Time | 3500ns |
| Lead Free | Lead Free |
| Packaging | Bag |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 860nm |
| Lead Length | 17.5mm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 70° |
| Output Current | 20mA |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Consumption | 75mW |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 20mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
