The PXN012-60QLJ is a general purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET. It features Trench MOSFET technology and is housed in a thermally efficient MLPAK33 (3.3 mm x 3.3 mm footprint) surface mount package.
| RoHS |
Compliant |
| Power Dissipation Max |
34.7W |
| Drain current (Id) Max |
42A |
| Operating Temperature Max |
150°C |
| Drain-source voltage (Vds) |
60V |
| Total gate charge (Qg) Typ |
16.4nC |
| Single pulse avalanche energy (Eas) |
90mJ |
| Drain-source on-state resistance (Rdson) Max @ 10V |
11.5mOhm |