PZT2222AT1G
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NPN BJT Transistor, 40V, 600mA, 300MHz, SOT-223
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in a SOT-223-4 package. Features a 40V collector-emitter breakdown voltage and 600mA maximum collector current. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 300MHz. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 1.5W. Supplied on a 1000-piece tape and reel.
| RoHS | Compliant |
| Width | 3.5mm |
| Height | 1.57mm |
| Length | 6.5mm |
| hFE Min | 35 |
| Polarity | NPN |
| Frequency | 300MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-4 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1000 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
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