PZT2907AT1G

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PZT2907AT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-223
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-223-4 package. Features a 60V collector-emitter voltage (VCEO) and a 600mA maximum collector current. Offers a 200MHz transition frequency and a minimum hFE of 100. Operates across a temperature range of -65°C to 150°C with 1.5W power dissipation. Packaged in a 1000-piece tape and reel.
RoHS Compliant
Width 3.5mm
Height 1.57mm
Length 6.5mm
hFE Min 100
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223-4
Max Frequency 200MHz
Current Rating -600mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 1000
Power Dissipation 1.5W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 1.5W
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -1.6V

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