PZT751T1G
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PNP BJT Transistor, 60V, 2A, 75MHz, SOT-223
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a SOT-223-4 package. Features a maximum collector current of 2A and a collector-emitter voltage (VCEO) of 60V. Offers a minimum DC current gain (hFE) of 75 and a transition frequency of 75MHz. Operating temperature range from -65°C to 150°C. Supplied on a 1000-piece tape and reel.
| RoHS | Compliant |
| Width | 3.5mm |
| Height | 1.57mm |
| Length | 6.5mm |
| hFE Min | 75 |
| Polarity | PNP |
| Frequency | 75MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-4 |
| Max Frequency | 75MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 800mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 75MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 75MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
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