Q65110-A1207
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NPN Phototransistor Module, 850nm, 6-Pin SMD
Дополнительная информация
Silicon NPN phototransistor module for surface mount applications. Features 850nm peak wavelength and a domed lens for top view sensing. This 6-pin SMD component offers a maximum collector current of 50mA and a maximum emitter-collector voltage of 70V. Operating temperature range is -40°C to 100°C, with a maximum power dissipation of 120mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Type | Module |
| EU RoHS | Yes |
| HTS Code | 8541407080 |
| Mounting | Surface Mount |
| Polarity | NPN |
| Cage Code | CG006 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541407080 |
| Package/Case | SMD |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 1.27 |
| Lens Shape Type | Domed |
| Peak Wavelength | 850nm |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.4(Max) |
| Package Description | Surface Mount Device |
| Package Family Name | SMD |
| Package Height (mm) | 2.1(Max) |
| Package Length (mm) | 4.2(Max) |
| Viewing Orientation | Top View |
| Maximum Dark Current | 3nA |
| Phototransistor Type | Phototransistor |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 100°C |
| Maximum Collector Current | 50mA |
| Maximum Power Dissipation | 120mW |
| Min Operating Temperature | -40°C |
| Number of Channels per Chip | 1 |
| Half Intensity Angle Degrees | 60° |
| Maximum Collector-Emitter Voltage | 70V |
| Maximum Emitter-Collector Voltage | 7V |
| Maximum Collector-Emitter Saturation Voltage | 0.17V |
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