QRE1113
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Reflective Object Sensor, Phototransistor, 30V, 50mA, DIP, TH
Дополнительная информация
Reflective object sensor featuring a phototransistor output and a 1mm sensing distance. This component operates with a 50mA forward current and a 30V collector-emitter breakdown voltage. It is housed in a DIP package for through-hole mounting and offers a 20µs response time. The sensor is RoHS compliant and designed for operation between -40°C and 85°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.9mm |
| Height | 1.7mm |
| Length | 3.6mm |
| Weight | 0.062g |
| Fall Time | 20us |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Wavelength | 940nm |
| Output Type | Phototransistor |
| Package/Case | DIP |
| Input Current | 50mA |
| Response Time | 20us |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Forward Current | 50mA |
| Reverse Voltage | 5V |
| Package Quantity | 160 |
| Sensing Distance | 1mm |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Reverse Voltage (DC) | 5V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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