QS5U17TR
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N-Channel JFET, 30V, 2A, 100mR, SOT-23-5
Дополнительная информация
N-channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a 30V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 2A. Offers a low Drain to Source On-Resistance (Rds On) of 100mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.25W. Packaged in a TSMT5 (SOT-23-5) surface mount configuration, this lead-free and RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-23-5 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 175pF |
| Power Dissipation | 1.25W |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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