QS5U27TR
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P-Channel JFET, 20V, 1.5A, SOT-23-5
Дополнительная информация
P-channel JFET for small signal applications. Features a 1.5A continuous drain current and a 20V drain-to-source breakdown voltage. Offers a low 200mΩ drain-to-source resistance (Rds On Max) and a 10ns turn-on delay time. Packaged in a TSMT5 (SOT-23-5) surface-mount case, this silicon FET operates from -55°C to 150°C with a maximum power dissipation of 900mW. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | -2V |
| Termination | SMD/SMT |
| Package/Case | SOT-23-5 |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 325pF |
| Power Dissipation | 1.25W |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | -20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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