QS5U28TR
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Краткое описание:
P-Channel JFET, 2A ID, 20V Vdss, SOT-23-5
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for small signal applications. Features a continuous drain current of 2A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 125mR and a maximum power dissipation of 1.25W. Packaged in a compact SOT-23-5 surface-mount case, this device operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 16ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.85mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Package/Case | SOT-23-5 |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 450pF |
| Power Dissipation | 1.25W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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