QS5U33TR
Производится
Увеличить
Краткое описание:
P-Channel JFET, 30V, 2A ID, 135mR Rds On, SOT-23-5
Дополнительная информация
P-channel silicon JFET for small signal applications. Features 30V drain-source breakdown voltage (Vdss) and 2A continuous drain current (ID). Offers low 135mΩ drain-source on-resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a 5-pin TSMT5 (SOT-23-5) surface-mount package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 135mR |
| Nominal Vgs | -2.5V |
| Termination | SMD/SMT |
| Package/Case | SOT-23-5 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 310pF |
| Power Dissipation | 1.25W |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | -30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | -30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
