QS6J1TR
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P-Channel MOSFET, 20V, 1.5A, 215mΩ, SMT
Дополнительная информация
P-channel MOSFET, surface mount, TSMT6 package. Features 20V drain-source breakdown voltage, 1.5A continuous drain current, and a maximum on-resistance of 215mΩ. Operates with a gate-source voltage up to 12V, exhibiting turn-on delay of 10ns and fall time of 12ns. Offers a maximum power dissipation of 1.25W and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 215mR |
| Package/Case | SOT-23-6 |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 270pF |
| Power Dissipation | 1.25W |
| Threshold Voltage | -2V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 310mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 340MR |
| Drain to Source Breakdown Voltage | -20V |
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