QS6J3TR
Снят с производства
Краткое описание:
P-Channel JFET, 1.5A ID, 20V Vdss, 215mR Rds(on), SOT-23-6
Дополнительная информация
P-channel JFET for small signal applications, featuring a 1.5A continuous drain current and 20V drain-source breakdown voltage. This surface-mount device offers a low 215mΩ drain-source on-resistance and 1.25W power dissipation. Key specifications include a 12V gate-source voltage, 270pF input capacitance, and fast switching times with a 10ns turn-on delay and 45ns turn-off delay. Packaged in a TSMT6 (SOT-23-6) for tape and reel distribution, this RoHS compliant component operates up to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 215mR |
| Nominal Vgs | -2V |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 270pF |
| Power Dissipation | 1.25W |
| Threshold Voltage | -2V |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | -20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Drain to Source Resistance | 215mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 215MR |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
