QS6K21
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Краткое описание:
N-CH MOSFET 45V 1A 6-Pin TSMT Dual
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 45V drain-source voltage and 1A continuous drain current. This dual-configuration transistor is housed in a compact 6-pin TSMT lead-frame SMT package with dimensions of 3mm x 1.8mm x 0.95mm. Key electrical characteristics include a maximum drain-source resistance of 420 mOhm at 4.5V and a typical gate charge of 1.5 nC at 4.5V. Operating across a temperature range of -55°C to 150°C, this surface-mount component offers a maximum power dissipation of 1250 mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSMT |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.8(Max) |
| Package Height (mm) | 0.95(Max) |
| Package Length (mm) | 3(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | 12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 45V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 95@10VpF |
| Maximum Continuous Drain Current | 1A |
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