QS6M4TR
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N/P-Ch JFET, 1.5A ID, 20V Vdss, 260mR Rds(on), SOT-23-6
Дополнительная информация
N-Channel and P-Channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a 1.5A continuous drain current (ID) and a 20V drain-to-source breakdown voltage (Vdss). Offers a low on-resistance of 230mR (Rds On Max) and a gate-to-source voltage (Vgs) up to 12V. Packaged in a surface-mount TSMT6 (SOT-23-6) with a maximum power dissipation of 1.25W. Operates across a wide temperature range from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 230mR |
| Package/Case | SOT-23-6 |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 80pF |
| Power Dissipation | 1.25W |
| Threshold Voltage | 1.5V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 260mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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