QSB363
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Краткое описание:
NPN Phototransistor, 940nm, 30V, 700mA, Axial
Дополнительная информация
NPN phototransistor, silicon, 940nm wavelength, 30V collector-emitter breakdown voltage, 700mA current rating, and 15µs fall time. Features a domed, transparent lens with a 24° viewing angle. Encased in a 2-pin T-3/4 axial package, measuring 3mm height, 2.7mm length, and 2.2mm width. Operates from -40°C to 85°C with a maximum power dissipation of 75mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.2mm |
| Height | 3mm |
| Length | 2.7mm |
| Weight | 0.09g |
| Polarity | NPN |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 940nm |
| Orientation | Top View |
| Output Power | 75mW |
| Package/Case | Axial |
| Viewing Angle | 24° |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| Voltage Rating | 30V |
| DC Rated Voltage | 30V |
| Power Consumption | 75mW |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5mA |
| Max Power Dissipation | 75mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
