QSB363GR
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Краткое описание:
Infrared Phototransistor, 940nm, 30V, 2mA, SMD, NPN
Дополнительная информация
Subminiature surface mount infrared phototransistor featuring a 30V collector-emitter breakdown voltage and 2mA maximum collector current. This NPN silicon device operates within a -25°C to 85°C temperature range, with a 75mW power dissipation. The phototransistor has a 940nm wavelength sensitivity and a 24° viewing angle, housed in a 2.7mm x 2.2mm x 3mm SMD/SMT package with a domed, transparent lens. Packaging is provided on a 1000-count tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.2mm |
| Height | 3mm |
| Length | 2.7mm |
| Weight | 0.09g |
| Polarity | NPN |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 940nm |
| Orientation | Top View |
| Package/Case | SMD/SMT |
| Viewing Angle | 24° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2mA |
| Max Power Dissipation | 75mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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