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NPN Phototransistor, 880nm, 30V, 100mW, Radial, Through Hole
Дополнительная информация
Silicon NPN phototransistor with 880nm peak sensitivity, featuring a 30V collector-emitter breakdown voltage and 100mW maximum power dissipation. This through-hole component, housed in a 2-pin T-1 3/4 radial package with a domed transparent lens, operates from -40°C to 100°C. It offers a 7µs fall time and a 24° viewing angle, with a maximum input current of 100µA.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 9.27mm |
| Weight | 0.284g |
| Polarity | NPN |
| Fall Time | 7us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | Radial |
| Input Current | 100uA |
| Viewing Angle | 24° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Max Input Current | 100uA |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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