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Infrared Phototransistor, NPN, 30V, 880nm, TO-18
Дополнительная информация
General purpose NPN silicon infrared phototransistor in a TO-18 package. Features a 30V collector-emitter breakdown voltage and 100mW maximum power dissipation. Operates with a 5V supply voltage and detects wavelengths up to 880nm. Includes a domed, transparent lens with a 40° viewing angle. Designed for through-hole mounting and operates across a temperature range of -40°C to 100°C. Packaged in bulk quantities of 250 units.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0g |
| Polarity | NPN |
| Fall Time | 8000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 40° |
| RoHS Compliant | No |
| Package Quantity | 250 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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