QSD724
Снят с производства
Увеличить
Краткое описание:
Infrared Phototransistor, NPN, 30V, 880nm, TO-18
Дополнительная информация
Infrared phototransistor featuring a TO-18 package and NPN polarity. Offers a 30V collector-emitter breakdown voltage and a 100mW power dissipation. Operates within a -40°C to 100°C temperature range with a 40° viewing angle and 880nm wavelength sensitivity. Designed for through-hole mounting with a domed, transparent lens.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0g |
| Polarity | NPN |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 40° |
| RoHS Compliant | No |
| Package Quantity | 250 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 30V |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
