QSE114
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Краткое описание:
NPN Phototransistor, 880nm, 30V VCEO, Side View, Through Hole
Дополнительная информация
Silicon NPN phototransistor for optical sensing, featuring an 880nm wavelength and a 25° viewing angle. This through-hole component offers a 30V collector-emitter breakdown voltage and a 400mV collector-emitter saturation voltage. With a 100mW maximum power dissipation and an operating temperature range of -40°C to 100°C, it is housed in a 2-pin radial plastic package with a domed, transparent lens. Fall time is 8µs, and it operates with a 5V supply voltage.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.54mm |
| Height | 5.08mm |
| Length | 4.44mm |
| Weight | 0.135g |
| Polarity | NPN |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Material | Plastic |
| Package Quantity | 500 |
| Max Input Current | 100uA |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
