QVE00832

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QVE00832 - Onsemi
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Краткое описание: 30V 20mA Through Hole Phototransistor
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

The QVE00832 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 20mA. It operates within a temperature range of -55°C to 100°C and has a power dissipation of 150mW. The device is packaged in a rail/Tube format with 50 units per package and is compliant with RoHS regulations. It has a response time of 4us and a wavelength of 940nm.
RoHS Compliant
Mount Through Hole
Fall Time 4us
Lead Free Lead Free
Packaging Rail/Tube
Wavelength 940nm
Response Time 4us
RoHS Compliant Yes
Forward Current 60mA
Package Quantity 50
Power Dissipation 150mW
Number of Elements 1
Output Configuration Phototransistor
Max Collector Current 20mA
Operating Supply Voltage 1.4V
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Reverse Breakdown Voltage 6V
Collector-emitter Voltage-Max 30V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V