R7110U-07
Снят с производства
Краткое описание:
Optoelectronic Device
Дополнительная информация
Compact hybrid photo-detector with low excess noise, high gain, and low hysteresis, operable in high magnetic fields. Suitable for high energy physics, medical applications, and other high precision measurements.
| Gain | 4 x 10^4 |
| RoHS | No |
| REACH | unknown |
| HTS Code | 8541.40.60.50 |
| Fall Time | 15ns |
| Lead Free | No |
| Rise Time | 1.3ns |
| Pulse Width | 5ns |
| Target Type | 3 mm Single-element Electron Bombarded Si-Avalanche Diode |
| Military Spec | False |
| Suitable Socket | E678-12M(Supplied) |
| Window Material | Synthetic Silica |
| Max Supply Voltage | -8500Vdc |
| Number of Functions | 1 |
| Diode Capacitance Typ | 120pF |
| Photocathode Material | Multialkali |
| Spectral Response Range | 160 to 850nm |
| Diode Leakage Current Max | 50nA |
| Max Operating Temperature | 50 |
| Min Operating Temperature | -40 |
| Wavelength of Max Response | 420nm |
| Photocathode Min Effective Area | 8mm dia. |
| Ambient Operating Temperature Range | -40 to +50°C |
| Max Avalanche Diode Reverse Bias Voltage | 155V |
| Cathode Sensitivity (Luminous, 2856K) Min | 100μA/lm |
| Cathode Sensitivity (Luminous, 2856K) Typ | 130μA/lm |
| Cathode Sensitivity (Radiant, 420 nm) Typ | 51mA/W |
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