RFD3055LESM9A
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Краткое описание:
N-Ch MOSFET 60V 11A 107mR TO-252AA SMT
Дополнительная информация
N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 107mΩ drain-source on-resistance at a nominal 3V gate-source voltage. This surface-mount component, packaged in TO-252AA, supports a maximum power dissipation of 38W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include an 8ns turn-on delay and 39ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 107mR |
| Nominal Vgs | 3V |
| Package/Case | TO-252AA |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 38W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 107mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 107mR |
| Drain to Source Breakdown Voltage | 60V |
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