RJH60D3DPE-00-J3
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Краткое описание:
600V 35A N-CH IGBT LDPAK(S)-1 SMT Transistor
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 35A continuous collector current. Housed in an LDPAK(S)-1 (TO-252) package with gull-wing leads, offering a 3-pin configuration with a tab. Maximum power dissipation is 113000mW, with a typical collector-emitter saturation voltage of 2V. Operates across a wide temperature range from -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Mounting | Surface Mount |
| Cage Code | SAN34 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Type | N |
| Package/Case | LDPAK(S)-1 |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 8.6 |
| Package Description | Large Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 4.44 |
| Package Length (mm) | 10.2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.54 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 113000mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Continuous Collector Current | 35A |
| Typical Collector Emitter Saturation Voltage | 2V |
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