RJK03M5DNS-00-J5

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RJK03M5DNS-00-J5 - Renesas
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Краткое описание: RJK03M5DNS-00-J5 Single Quad Drain Triple Source Enhancement N-Channel MOSFET 30V 25A 15000mW HWSON-8
Производитель Renesas
Статус производства Производится (ACTIVE)

Дополнительная информация

The RJK03M5DNS-00-J5 is a single quad drain triple source enhancement N-channel MOSFET with a maximum drain source voltage of 30V and a maximum continuous drain current of 25A. It has a maximum power dissipation of 15000mW and operates over a temperature range of -55°C to 150°C. The device is packaged in a surface mount HWSON-8 package with a seated plane height of 0.8mm and a pin pitch of 0.65mm.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code SAN34
Pin Count 8
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case HWSON
AEC Qualified No
Configuration Single Quad Drain Triple Source
Pin Pitch (mm) 0.65
Package Width (mm) 3(Min)
Package Height (mm) 0.8(Max)
Package Length (mm) 3.1
Seated Plane Height (mm) 0.8(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 15000mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs [email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 6.3@10VmOhm
Typical Input Capacitance @ Vds 1350@10VpF
Maximum Continuous Drain Current 25A

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