RJK0855DPB-00-J5
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Краткое описание:
N-CH MOSFET 80V 30A LFPAK SMT Power Transistor
Дополнительная информация
N-channel enhancement mode silicon power MOSFET, 80V drain-source voltage, 30A continuous drain current. Features 11000 mOhm maximum drain-source resistance at 10V, 35 nC typical gate charge, and 2550 pF typical input capacitance. Surface mountable in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Operates from -55°C to 150°C with 60W maximum power dissipation.
| PCB | 4 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | SAN34 |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LFPAK |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Weight (g) | 0.08 |
| Package Width (mm) | 3.95 |
| Package Family Name | LFPAK |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 35nC |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Maximum Drain Source Voltage | 80V |
| Maximum Drain Source Resistance | 11000@10VmOhm |
| Typical Input Capacitance @ Vds | 2550@10VpF |
| Maximum Continuous Drain Current | 30A |
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