RJK1526DPJ
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Краткое описание:
N-CH Power MOSFET 150V 50A LDPAK(L) Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 150V drain-source voltage and 50A continuous drain current. This single element silicon transistor offers a low 42mOhm drain-source resistance at 10V gate-source voltage. Housed in a 3-pin LDPAK(L) through-hole package with a tab, it supports a maximum power dissipation of 100W and operates across a wide temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | SAN34 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LDPAK(L) |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.44 |
| Package Description | Large Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 8.6 |
| Package Length (mm) | 10.2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 11.3 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 46nC |
| Typical Gate Charge @ Vgs | 46@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Drain Source Resistance | 42@10VmOhm |
| Typical Input Capacitance @ Vds | 1800@25VpF |
| Maximum Continuous Drain Current | 50A |
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