RJM0306JSP-00-J0
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Краткое описание:
MOSFET N/P-CH Si 30V 3.5A 8-Pin SOP SMT
Дополнительная информация
Surface mount N-channel/P-channel enhancement mode silicon power MOSFETs featuring 30V drain-source voltage and 3.5A continuous drain current. These quad-configuration transistors are housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.95mm x 1.5mm. Key specifications include low on-resistance of 65mOhm (N-channel) and 120mOhm (P-channel) at 10V Vgs, with typical gate charge of 5nC (N-channel) and 6nC (P-channel). Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | SAN34 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Quad |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.95 |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1.5(Max) |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 5@N Channel|6@P ChannelnC |
| Typical Gate Charge @ Vgs | 5@10V@N Channel|6@10V@P ChannelnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 65@10V@N Channel|120@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 290@10V@N Channel|320@10V@P ChannelpF |
| Maximum Continuous Drain Current | 3.5A |
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