RN1405(F)

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RN1405(F) - Toshiba
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Краткое описание: NPN Digital Transistor, 50V, 100mA, 200mW, SMT, 3-Pin
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN digital bipolar junction transistor (BJT) in a 3-pin S-Mini surface-mount package. Features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA, with 200mW maximum power dissipation. Includes a typical input resistor of 2.2 kOhm and a resistor ratio of 0.0468. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Typical Input Resistor 2.2kOhm
Typical Resistor Ratio 0.0468
Minimum DC Current Gain 80@10mA@5V
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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