RN1412(TE85L,F)

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RN1412(TE85L,F) - Toshiba
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Краткое описание: NPN Digital Transistor 50V 100mA 200mW S-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN digital bipolar junction transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 100mA continuous DC collector current. Offers 200mW maximum power dissipation and a typical input resistance of 22 kOhm. Packaged in a 3-pin S-Mini (S-MINI) plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operating temperature range from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Typical Input Resistor 22kOhm
Minimum DC Current Gain 120@1mA@5V
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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