RN1703(TE85R,F)

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RN1703(TE85R,F) - Toshiba
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Краткое описание: NPN Digital Transistor 50V 100mA 5-Pin USV SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN digital bipolar junction transistor (BJT) for surface mount applications. Features dual common emitter configuration, 50V maximum collector-emitter voltage, and 100mA maximum continuous DC collector current. Housed in a compact 5-pin USV package (2mm x 1.25mm x 0.9mm) with gull-wing leads and a 0.65mm pin pitch. Includes an integrated 22 kOhm input resistor, offering a 1:1 resistor ratio. Operates across a wide temperature range from -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case USV
AEC Qualified No
Configuration Dual Common Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Typical Input Resistor 22kOhm
Typical Resistor Ratio 1
Minimum DC Current Gain 70@10mA@5V
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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