RN1709JE(TE85L,F)

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RN1709JE(TE85L,F) - Toshiba
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Краткое описание: NPN Digital Transistor, 50V, 100mA, 100mW, 5-Pin SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN digital bipolar junction transistor (BJT) for surface mount applications. Features dual common emitter configuration, 50V collector-emitter voltage, and 100mA continuous collector current. Delivers 100mW maximum power dissipation within a compact 1.6mm x 1.2mm x 0.55mm ESV package. Includes integrated 47kΩ input resistor with a 2.14 resistor ratio. Operates across a wide temperature range from -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Package/Case ESV
AEC Qualified No
Configuration Dual Common Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Typical Input Resistor 47kOhm
Typical Resistor Ratio 2.14
Minimum DC Current Gain 70@10mA@5V
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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