RN1710JE(TE85L,F)

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RN1710JE(TE85L,F) - Toshiba
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Краткое описание: Dual NPN Transistor, 50V, 100mA, 100mW, 5-Pin ESV SOT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

This dual NPN transistor features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 100mW and a typical input resistor of 4.7k. The transistor is mounted using surface mount technology and has a seated plane height of 0.55mm. It operates within a temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Package/Case ESV
AEC Qualified No
Configuration Dual Common Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Typical Input Resistor 4.7kOhm
Minimum DC Current Gain 120@1mA@5V
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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