RN1907(TE85R,F)

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RN1907(TE85R,F) - Toshiba
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Краткое описание: Dual NPN Transistor, 50V, 100mA, 200mW, SOT-363
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

The Toshiba RN1907(TE85R,F) is a dual NPN transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 200mW and a typical input resistor of 10 ohms. The transistor is packaged in a SOT-363 package, which is a surface mount package with a seated plane height of 1.1mm maximum. The operating temperature range is from -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-363
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Typical Input Resistor 10kOhm
Typical Resistor Ratio 0.213
Minimum DC Current Gain 80@10mA@5V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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