RN2009(TPE2)

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RN2009(TPE2) - Toshiba
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Краткое описание: PNP Digital BJT 50V 100mA TO-92
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Digital Transistor, BJT, featuring a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. This single-configuration transistor is housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Key specifications include a 400mW maximum power dissipation, a typical input resistor of 47 kOhm, and a minimum DC current gain of 70. Operating temperature range spans from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type PNP
Jedec TO-92
HTS Code 8541210075
Mounting Through Hole
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Formed
Schedule B 8541210080
Package/Case TO-92
AEC Qualified No
Configuration Single
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.1(Max)
Package Description Plastic Header Style Package
Package Family Name TO-92
Package Height (mm) 4.7(Max)
Package Length (mm) 5.1(Max)
Radiation Hardening No
Typical Input Resistor 47kOhm
Typical Resistor Ratio 2.14
Minimum DC Current Gain 70@10mA@5V
Seated Plane Height (mm) 4.7(Max) + 1.8
Max Operating Temperature 150°C
Maximum Power Dissipation 400mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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