RN2503(TE85L,F)

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RN2503(TE85L,F) - Toshiba
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Краткое описание: PNP Digital Transistor, 50V, 100mA, 300mW, 5-Pin SMV
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Digital BJT transistor, dual common emitter configuration, rated for 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. Features 300mW maximum power dissipation, 22 kOhm typical input resistance, and a 1:1 typical resistor ratio. Housed in a 5-pin SMV (SOT-25) SSOP package with gull-wing leads for surface mounting. Operates across a temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Type PNP
Jedec SOT-25
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SMV
AEC Qualified No
Configuration Dual Common Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.014
Package Width (mm) 1.6
Package Description Small Outline Transistor
Package Family Name SSOP
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Typical Input Resistor 22kOhm
Typical Resistor Ratio 1
Minimum DC Current Gain 70@10mA@5V
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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