RN4907(TE85R,F)

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RN4907(TE85R,F) - Toshiba
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Краткое описание: Dual NPN/PNP Transistor, 50V, 100mA, 200mW, SOT-363
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

The RN4907(TE85R,F) is a dual NPN/PNP transistor from Toshiba, packaged in a surface mount SOT-363 package. It has a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. The maximum power dissipation is 200mW. The transistor has a typical input resistor of 10 and a typical resistor ratio of 0.213. It operates over a temperature range of -55 to 150 degrees Celsius.
PCB 6
ECCN EAR99
PPAP No
Type NPN|PNP
Jedec SOT-363
EU RoHS Yes
HTS Code 8541210075
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Typical Input Resistor 10kOhm
Typical Resistor Ratio 0.213
Minimum DC Current Gain 80@10mA@5V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 100mA
Maximum Collector-Emitter Saturation Voltage [email protected]@5mAV

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