RPI-579N1
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Краткое описание:
Phototransistor 1.3V 30mA 80mW Through Hole 10mm 13.8mm 6mm
Дополнительная информация
The RPI-579N1 phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for through hole mounting with a height of 10mm and a length of 13.8mm, and a width of 6mm. The device is RoHS compliant and has a maximum operating temperature of 85°C and a minimum operating temperature of -25°C. The RPI-579N1 has a response time of 10us and a fall time of 10us.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6mm |
| Height | 10mm |
| Length | 13.8mm |
| Fall Time | 10us |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Wavelength | 950nm |
| Response Time | 10us |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| Forward Current | 50mA |
| DC Rated Voltage | 1.3V |
| Package Quantity | 1000 |
| Power Dissipation | 80mW |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | No |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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