RSR020P03TL
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Краткое описание:
P-Channel JFET, 30V, 2A ID, 120mR Rds(on), Surface Mount
Дополнительная информация
P-channel JFET with 30V drain-source breakdown voltage and 2A continuous drain current. Features 120mΩ max drain-source on-resistance and 1W power dissipation. Operates from -55°C to 150°C, packaged in TSMT3 for surface mounting. Includes 370pF input capacitance and fast switching times with 8ns turn-on and 11ns fall times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SC |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Input Capacitance | 370pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | -30V |
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